Hafnium germanium telluride

Low temperature mobility in hafnium-oxide gated germanium p-channel metal-oxide-semiconductor field-effect transistors

Theory of persistent , p - type , metallic conduction in c - GeTe

It has been known for over twenty years that rhombohedral c-germanium telluride is predicted to be a narrow gap semiconductor. However, it always displays p-type metallic conduction. This behaviour is also observed in other chalcogenide materials, including Ge2Sb2Te5, commonly used for optically and electrically switched, non-volatile memory, and so is of great interest. We present a theoretica...

Extrapolation of Transport Properties and Figure of Merit of a Thermoelectric Material

The accurate determination of the thermoelectric properties of a material becomes increasingly difficult as the temperature rises. However, it is the properties at elevated temperatures that are important if thermoelectric generator efficiency is to be improved. It is shown that the dimensionless figure of merit, ZT, might be expected to rise with temperature for a given material provided that ...

Ge MOS Capacitors with Thermally Evaporated HfO2 as Gate Dielectric

We have investigated the characteristics of thermally evaporated hafnium oxide HfO2 films on germanium substrates. Surface roughness of the HfO2 film was studied by scanning electron microscopy. The presence of crystalline GeO2 was evident from X-ray diffraction results on as-deposited films. Capacitance–voltage C-V and current–voltage I-V measurements of the asdeposited metal-oxide semiconduct...

Zr Stabilized Ti5Te4-Type Hafnium Telluride

Hafnium and zirconium are commonly thought to be very similar in chemistry. However, they are surprisingly dissimilar in the chemistry of metal-rich chalcogenides. For instance, Hf2S [1] and Hf2Se [2] are comprised of hexagonal closepacked double metal atom layers spaced by sulfur or selenium while both Zr2S [3] and Zr2Se [4] crystallize in a Ta2P-type structure [5]. Zr2Te [6] and Hf2Te [7] ado...